![]() ![]() ![]() The main purpose of this layer is to ensure the separation of the Hetero-junction interface from the doped Aluminium Gallium Arsenide region. After that, a very thin layer between 30 and 60 Angstroms of intrinsic Aluminium Gallium Arsenide is set down on top of this layer. The manufacture of an HEMT as follows procedure, first an intrinsic layer of Gallium Arsenide is set down on the semi-insulating Gallium Arsenide layer. Gallium Arsenide is generally used because it provides a high level of basic electron mobility which has higher mobilities and carrier drift velocities than Si. The most common materials used Aluminium Gallium Arsenide (AlGaAs) and Gallium Arsenide (GaAs). Instead of the p-n junction, a metal-semiconductor junction (reverse-biased Schottky barrier) is used, where the simplicity of Schottky barriers allows fabrication to close geometrical tolerances. It is known as a hetero-junction and consists of a junction that uses different materials either side of the junction. The key element that is used to construct an HEMT is the specialised PN junction. High Electron Mobility Transistor (HEMT) Construction
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